PART |
Description |
Maker |
DR65-0109TR |
Single Driver for GaAs FET Switches and Attenuators
|
M/A-COM Technology Solutions, Inc.
|
MGFK36V4045 |
RECTIFIER SCHOTTKY SINGLE 2A 100V 50A-Ifsm 0.79Vf 0.5A-IR SMB 3K/REEL 14.0-14.5GHz BAND 4W INTERNALLY MATCHED GaAs FET 14.0-14.5 GHz BAND 4W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
|
DR65-0001 DR65-0001TR |
Quad driver for GaAs switches and attenuator Quad Driver for GaAs FET Switches and Attenuators 四驱动砷化镓场效应管开关和衰减
|
MA-Com Tyco Electronics 飞思卡尔半导体(中国)有限公司
|
SWD-119 SWD-119PIN SWD-119TR |
Quad Driver for GaAs FET Switches and Attenuators
|
Tyco Electronics
|
SWD-119-PIN SWD-119TR |
Quad Driver for GaAs FET Switches and Attenuators
|
M/A-COM Technology Solutions, Inc.
|
DR65-00011 DR65-001TR |
Quad Driver for GaAs FET Switches and Attenuators
|
Tyco Electronics
|
NEZ7785-4D NEZ7785-4DD NEZ7785-8D NEZ7785-8DD NEZ4 |
4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET 4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET 4W/8W C波段砷化镓场效应管N沟道砷化镓场效应晶体 CAP 15UF 16V 10% TANT SMD-6032-28 TR-7 CAP TANTALUM 1.5UF 35V 10% SMD 20 characters x 4 Lines, 5x7 Dot Matric Character and Cursor VARISTOR, 300VAC; Series:VE; Voltage rating, AC:300V; Suppressor type:Varistors; Voltage rating, DC:385V; Current, Peak Pulse IPP @ 8/20uS:2500A; Voltage, clamping 8/20us max:775V; Energy, transient 10/1000us max:45J; RoHS Compliant: Yes
|
NEC, Corp. NEC Corp. NEC[NEC] http://
|
MGF0907 MGF0907B |
L /S BAND POWER GaAs FET MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET
|
Mitsubishi Electric Corporation
|
HIP4081 HIP4081IP |
2.6 A FULL BRDG BASED MOSFET DRIVER, PDIP20 Driver, Full Bridge FET, High Frequency, 80V/2.5A Peak, Independent 4 N-Channel FET Driver
|
INTERSIL CORP
|
MGF0906 MGF0906B 0906B |
LS BAND POWER GaAs FET L /S BAND POWER GaAs FET From old datasheet system L,S BAND POWER GaAs FET
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|